Nanostructuring and thermoelectric properties of bulk N-type Mg 2Si

Journal Wuhan University of Technology, Materials Science Edition

Volumn 24, Issue 6, 2009, Pages 912-916

  Yang, Meijun ^a   Zhang, Lianmeng ^a   Shen, Qiang ^a  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Mg2si; Nanostructuring; Semiconductor; Thermoelectric effects

Indexed keywords

BULK MATERIALS; FIGURE OF MERIT; GRAIN SIZE; MECHANICAL MILLING; N-TYPE CONDUCTION; NANO-SIZED; NANO-STRUCTURED; NANO-STRUCTURING; SINTERED SAMPLES; THERMOELECTRIC EFFECTS; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES;

DOPING (ADDITIVES); GRAIN SIZE AND SHAPE; MATERIALS HANDLING EQUIPMENT; MECHANICAL ALLOYING; SPARK PLASMA SINTERING; THERMOELECTRIC EQUIPMENT;

SILICON;

EID: 77953136549     PISSN: 10002413     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11595-009-6912-5     Document Type: Article

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