Structural and optical characterization of single-phase γ-In2Se3 films with room-temperature photoluminescence

Journal of Alloys and Compounds

Volumn 499, Issue 1, 2010, Pages 104-107

  Lyu, D Y ^a   Lin, T Y ^a   Chang, T W ^a   Lan, S M ^b   Yang, T N ^c   Chiang, C C ^c   Chen, C L ^a   Chiang, H P ^a,d  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^c INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

^d INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

InSe; MOCVD; Photoluminescence

Indexed keywords

ATMOSPHERIC METALS; FREE EXCITONS; FREE-EXCITON EMISSIONS; INSE; MOCVD; NEAR BAND EDGE EMISSIONS; OPTICAL CHARACTERIZATION; PEAK ENERGY; RED SHIFT; ROOM TEMPERATURE; ROOM-TEMPERATURE PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; TEMPERATURE REGIONS;

CRYSTAL STRUCTURE; EXCITONS; LASER RADIATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE DISTRIBUTION; X RAY DIFFRACTION;

ATMOSPHERIC TEMPERATURE;

EID: 77953136223     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.03.130     Document Type: Article

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