Tin doping in spray pyrolysed indium sulfide thin films for solar cell applications

Solar Energy

Volumn 84, Issue 6, 2010, Pages 888-897

  Mathew, Meril ^a   Gopinath, Manju ^a   Kartha, C Sudha ^a   P Vijayakumar, K ^a   Kashiwaba, Y ^b   Abe, T ^b  

^a Department of Physics   (India)

^b IWATE UNIVERSITY   (Japan)

Author keywords

Buffer layer; Indium sulfide; Spray pyrolysis; Thin film solar cell; Tin doping

Indexed keywords

BAND GAPS; BI-LAYER FILMS; CHEMICAL SPRAY PYROLYSIS; CRYSTALLINITIES; EX SITU; IN-SITU; IN-SITU DOPING; LOW CRYSTALLINITY; OXYGEN INCORPORATION; PHOTOSENSITIVE FILMS; SOLAR-CELL APPLICATIONS; SPRAY SOLUTIONS; SULFIDE FILMS; THIN FILM SOLAR CELL; THIN FILM SOLAR CELLS; TIN-DOPED INDIUM;

AMORPHOUS FILMS; BUFFER LAYERS; CRACKING (CHEMICAL); ENERGY GAP; INDIUM; INDIUM SULFIDE; LIGHT SENSITIVE MATERIALS; OXYGEN; PHOTOSENSITIVITY; SEMICONDUCTOR DOPING; SOLAR CELLS; THIN FILMS; TIN; TITANIUM COMPOUNDS; VAPOR DEPOSITION;

SPRAY PYROLYSIS;

ANNEALING; CRYSTALLINITY; DIFFUSION; FILM; INDIUM; OXYGEN; PHOTOVOLTAIC SYSTEM; PHYSICAL PROPERTY; PYROLYSIS; SOLAR POWER; SULFIDE; THERMAL ALTERATION; TIN;

EID: 77953135515     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2010.01.030     Document Type: Article

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