Room temperature ferromagnetism in Mn-doped silicon carbide from first-principles calculations

Journal of Physics Condensed Matter

Volumn 22, Issue 24, 2010, Pages

  Los, A ^a,b   Los, V ^c  

^a ISS Ltd Semiconductors and Circuits Lab   (Ukraine)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c INSTITUTE OF MAGNETISM   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ATOMIC POSITIONS; COMPUTATIONAL APPROACH; DILUTED MAGNETIC SEMICONDUCTORS; ELECTRONIC ORBITALS; FERROMAGNETIC AND ANTI-FERROMAGNETIC; FIRST-PRINCIPLES CALCULATION; LATTICE SITES; MN ATOMS; MN IMPURITY; MN-DOPED; NONMONOTONIC; ORDERING TEMPERATURE; POLYTYPES; ROOM TEMPERATURE; ROOM TEMPERATURE FERROMAGNETISM; SPATIAL DISTRIBUTION; SPINTRONICS APPLICATION; SUPER CELL; TOTAL ENERGY; TOTAL ENERGY CALCULATION;

ANTIFERROMAGNETISM; CRYSTAL IMPURITIES; CURIE TEMPERATURE; DENSITY FUNCTIONAL THEORY; FERROMAGNETISM; MAGNETIC MOMENTS; MAGNETIC SEMICONDUCTORS; MANGANESE COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SIZE DISTRIBUTION;

MANGANESE;

EID: 77953117495     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/24/245801     Document Type: Article

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