Design of GaN HEMT based Doherty amplifiers

2010 IEEE 11th Annual Wireless and Microwave Technology Conference, WAMICON 2010

Volumn , Issue , 2010, Pages

  Markos, A Z ^a   Bathich, K ^a   Boeck, G ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADJACENT CHANNEL LEAKAGE RATIOS; BACK-OFF; CLASS-AB; DIGITALLY-MODULATED SIGNALS; DOHERTY; DOHERTY POWER AMPLIFIER; DRAIN EFFICIENCY; FRACTIONAL BANDWIDTHS; GAN HEMTS; GENERATION SYSTEMS; HIGH EFFICIENCY; MAXIMUM OUTPUT POWER; NARROW BANDS; OUTPUT POWER; PEAK-TO-AVERAGE POWER RATIOS; POWER-ADDED EFFICIENCY; SIGNAL CONSTELLATION; UMTS-LTE; UNSYMMETRICAL; WIDE-BAND;

AMPLIFIERS (ELECTRONIC); DESIGN; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE DEVICES; MICROWAVES; STEEL BEAMS AND GIRDERS;

DOHERTY AMPLIFIERS;

EID: 77953079575     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WAMICON.2010.5461860     Document Type: Conference Paper

References (10)

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7. th European Microwave Integrated Circuits Conference. pp. 17-20.2009.
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