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Journal of Applied Physics

Volumn 107, Issue 10, 2010, Pages

Modeling of injection characteristics of polar and nonpolar III-nitride multiple quantum well structures

(2) Kisin, Mikhail V a El Ghoroury, Hussein S a

a Ostendo Technologies Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BLOCKING LAYERS; CARRIER CONFINEMENTS; CARRIER DISTRIBUTIONS; III-NITRIDE; INHOMOGENEITIES; INTERNAL QUANTUM EFFICIENCY; LASER DIODE STRUCTURES; LASER STRUCTURES; MULTIPLE QUANTUM-WELL STRUCTURES; NON-POLAR; NONPOLAR STRUCTURES; NONUNIFORM; OPTICAL EMISSIONS; POLAR STRUCTURES; POLARIZATION CHARGES; QUANTUM WELL; RESIDUAL CHARGE; WAVEGUIDE LAYERS;

DIODES; INDIUM; LIGHT EMISSION; LIGHT EMITTING DIODES; NITRIDES; POLARIZATION; QUANTUM WELL LASERS; SEMICONDUCTOR DEVICE STRUCTURES; WAVEGUIDES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77952999831 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3427540 Document Type: Article

Times cited : (12)

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