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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 3, 2010, Pages

Investigation of multistack InAs/InGaAs/GaAs self-assembled quantum dots-in-double-well structures for infrared detectors

(10) Sharma, Yagya D a Kutty, M N a Shenoi, R V a Barve, Ajit V a Myers, S a Shao, J a Plis, E a Lee, S a,b Noh, S a,b Krishna, S a

a UNIVERSITY OF NEW MEXICO (United States)

b Korea Research Institute of Standards and Science (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTIMIZATION; SEMICONDUCTOR QUANTUM DOTS; TRANSPORT PROPERTIES;

DEVICE PERFORMANCE; DOUBLE-DWELL; GAAS SUBSTRATES; PHOTOCONDUCTIVE GAINS; QUANTUM DOT; RESPONSIVITY; SELF ASSEMBLED QUANTUM DOTS; SINGLE PIXEL; SOLID SOURCE MOLECULAR BEAM EPITAXY; SPECTRAL RESPONSE; TOTAL CURRENT; WELL STRUCTURE;

DETECTORS;

EID: 77952987415 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3319324 Document Type: Conference Paper

Times cited : (23)

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