Effect of copper barrier dielectric deposition process on characterization of copper interconnect

Journal of Vacuum Science and Technology B

Volumn 28, Issue 3, 2010, Pages 567-572

  Cheng, Yi Lung ^a   Chiu, Tai Jung ^a   Wei, Bor Jou ^b   Wang, Huan Jung ^a   Wu, Jiung ^b   Wang, Ying Lang ^a  

^a NATIONAL CHI NAN UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DEPOSITION; INTEGRATED CIRCUIT INTERCONNECTS; PLASMA APPLICATIONS; PREHEATING; SILICON NITRIDE;

BARRIER DIELECTRICS; BARRIER FILMS; COPPER CU; COPPER INTERCONNECTS; CU INTERCONNECT; DEPOSITION PROCESS; DIELECTRIC DEPOSITION; EFFECT OF COPPERS; FILM-DEPOSITION PROCESS; PRE-HEATING TIME;

CHEMICAL MECHANICAL POLISHING;

EID: 77952961865     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3425631     Document Type: Conference Paper

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