TEM study on diffusion process of NiFe Schottky and MgO/NiFe tunneling diodes for spin injection in silicon

IEEE Transactions on Magnetics

Volumn 46, Issue 6, 2010, Pages 2067-2069

  Lee, Jehyun ^a   Uhrmann, Thomas ^b   Dimopoulos, Theodoros ^b   Brückl, Hubert ^b   Fidler, Josef ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b AIT AUSTRIAN INSTITUTE OF TECHNOLOGY   (Austria)

Author keywords

Diffusion processes; Electron microscopy; Schottky barriers; Schottky diodes; Spin injection; Tunnel diodes

Indexed keywords

BINARY ALLOYS; DIFFUSION IN SOLIDS; DIODES; ELECTRON MICROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IRON ALLOYS; IRON METALLOGRAPHY; MAGNESIA; MAGNESIUM ALLOYS; MAGNESIUM METALLOGRAPHY; NICKEL COMPOUNDS; OXIDE MINERALS; SCHOTTKY BARRIER DIODES; SILICIDES; SILICON; SUBSTRATES; TUNNEL DIODES;

ANALYTICAL ELECTRON MICROSCOPY; CROSS-SECTIONAL TEM; DIFFUSION PROCESS; ELECTRICAL CHARACTERIZATION; ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SPIN INJECTION;

NICKEL METALLOGRAPHY;

EID: 77952830666     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2010.2040594     Document Type: Article

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