Low-temperature CMOS-compatible 3D-integration of monocrystalline-silicon based PZT RF MEMS switch actuators on RF substrates

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2010, Pages 47-50

  Saharil, Farizah ^a   Wright, Robert V ^b   Rantakari, Pekka ^c   Kirby, Paul B ^b   Vähä Heikkilä, Tauno ^c   Niklaus, Frank ^a   Stemme, Göran ^a   Oberhammer, Joachim ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b CRANFIELD UNIVERSITY   (United Kingdom)

^c VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS COMPATIBLE; DONOR WAFERS; FABRICATION PROCESS; HIGH TEMPERATURE; LEAD ZIRCONATE TITANATE; LOW TEMPERATURES; MONOCRYSTALLINE; MULTILAYER STACKS; PZT; RF-MEMS SWITCHES; SHEAR FORCE; SILICON-BASED; SILICON-ON-INSULATORS; WAFER TRANSFERS;

CMOS INTEGRATED CIRCUITS; ELECTRIC SWITCHES; GLASS BONDING; INTEGRATION; MECHANICAL ENGINEERING; MECHANICS; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; REACTIVE ION ETCHING; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SUBSTRATES;

WAFER BONDING;

EID: 77952748558     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2010.5442568     Document Type: Conference Paper

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