Electrical properties of lead-free relaxor ferroelectric solid solution single crystal (Na1/2Bi1/2)TiO3-BaTiO 3 grown by Bridgman method

Japanese Journal of Applied Physics

Volumn 48, Issue 9 Part 2, 2009, Pages

  Yasuda, Naohiko ^a   Hashimoto, Shinji ^a   Ohwa, Hidehiro ^a   Sakurada, Osamu ^a   Fujita, Kazuhiko ^b   Yamashita, Yohachi ^c   Iwata, Makoto ^d   Ishibashi, Yoshihiro ^e  

^a GIFU UNIVERSITY   (Japan)

^b GIFU NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c TOSHIBA CORPORATION   (Japan)

^d NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^e KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BRIDGMAN METHODS; DIELECTRIC DISPERSION; DOMAIN WALL STRUCTURES; ELECTRIC FIELD CURVES; ELECTRICAL PROPERTY; FREQUENCY DISPERSION; GOOD OPTICAL QUALITY; ISOTROPIZATION; LEAD-FREE RELAXOR; PEROVSKITE COMPOUNDS; PIEZOELECTRIC BEHAVIOR; POLARIZATION REVERSALS; POLARIZING MICROSCOPES; RANDOM FIELDS; RELATIVE PERMITTIVITY; RHOMBOHEDRAL PHASE; ROOM TEMPERATURE; TETRAGONAL PHASE; TIO;

CRYSTAL GROWTH FROM MELT; CRYSTALLIZATION; DISPERSIONS; ELECTRIC FIELDS; ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; FERROELECTRICITY; HEATING; HYSTERESIS; HYSTERESIS LOOPS; OPTICAL PROPERTIES; OXIDE MINERALS; PERMITTIVITY; PEROVSKITE; POLARIZATION; SODIUM; SOLID SOLUTIONS; SOLIDIFICATION;

SINGLE CRYSTALS;

EID: 77952733073     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.09KC06     Document Type: Article

References (36)

1. J. Kuwata, K. Uchino, and S. Nomura: Jpn. J. Appl. Phys. 21 (1982) 1298.
2. S. E. Park and T. R. Shrout: J. Appl. Phys. 82 (1997) 1804.
3. Y. Ishibashi and M. Iwata: Jpn. J. Appl. Phys. 37 (1998) L985.
4. Y. Ishibashi and M. Iwata: Jpn. J. Appl. Phys. 38 (1999) 800.
5. N. Yasuda, K. Fujita, H. Ohwa, M. Matsushita, Y. Yamashita, M. Iwata, and Y. Ishibashi: Jpn. J. Appl. Phys. 45 (2006) 7413.
6. N. Setter: Piezoelectric Materials in Devices (Ceramic Laboratory EPFL Swiss Federal Institute of Technology, Lausanne, 2002) Chaps. 1 and 20.
7. T. Takenaka, K. Maruyama, and K. Sakata: Jpn. J. Appl. Phys. 30 (1991) 2236.
8. Y. Chiang, G. Farrey, and A. Soukhojak: Appl. Phys. Lett. 73 (1998) 3683.
9. Y. Hiruma, H. Nagata, and T. Takenaka: J. Appl. Phys. 104 (2008) 124106.
10. S. A. Sheets, A. N. Soukhojak, N. Ohashi, and Y. M. Chiang: J. Appl. Phys. 90 (2001) 5287.
11. S. E. Park and K. S. Hong: J. Appl. Phys. 79 (1996) 383.
12. S. E. Park and S. J. Chung: J. Am. Ceram. Soc. 77 (1994) 2641.
13. S. E. Park and S. J. Chung: J. Am. Ceram. Soc. 79 (1996) 1290.
14. H. Nagata, M. Yoshida, Y. Makiuchi, and T. Takenaka: Jpn. J. Appl. Phys. 42 (2003) 7401.
15. Y. Hiruma, H. Nagata, and T. Takenaka: Jpn. J. Appl. Phys. 45 (2006) 7409.
16. J. A. Zvirgzds, P. P. Kapostin, J. V. Zvirgzde, and T. V. Kruzina: Ferroelectrics 40 (1982) 75.
17. I. P. Pronin, P. P. Syrnikov, V. A. Isupov, V. M. Egorov, and V. A. Zaitseva: Ferroelectrics 25 (1980) 395.
18. S. B. Vakhrushev, B. E. Kvyatkovskii, R. S. Malysheva, N. M. Okuneva, and P. P. Syrnikov: Sov. Phys. Solid State 27 (1985) 455.
19. V. A. Isupov, I. P. Pronin, and T. V. Kruzina: Ferroelectr. Lett. 2 (1984) 205.
20. C. S. Tu, I. G. Snny, and V. H. Schmidt: Phys. Rev. B 49 (1994) 11550.
21. I. G. Siny, C. S. Tu, and V. H. Schmidt: Phys. Rev. B 51 (1995) 5659.
22. S. Teranishi, M. Suzuki, Y. Noguchi, N. Miyayama, C. Moriyoshi, Y. Kuroiwa, K. Tawa, and S. Mori: Appl. Phys. Lett. 92 (2008) 182905.
23. X. Ren: Nat. Mater. 3 (2004) 91.
24. V. Westphal, W. Kleeman, and M. D. Glinchuk: Phys. Rev. Lett. 68 (1992) 847.
25. I. K. Bdikin, V. V. Shvartsman, and A. L. Kholkin: Appl. Phys. Lett. 83 (2003) 4232.
26. Md. M. Rahman and N. Yasuda: Solid State Commun. 149 (2009) 630.
27. W. Ge, H. Liu, Z. Xiangyong, F. Bijun, L. Xiaobing, W. Feifei, Z. Dan, Y. Ping, P. Xiaoming, L. Di, and L. Haosu: J. Phys. D 41 (2008) 115403.
28. Y. Hosono, K. Harada, and Y. Yamashita: Jpn. J. Appl. Phys. 40 (2001) 5722.
29. G. Xu, Z. Duan, X. Wang, and D. Yang: J. Cryst. Growth 275 (2005) 113.
30. N. Yasuda, N. Mori, H. Ohwa, Y. Hosono, Y. Yamashita, M. Iwata, M. Maeda, I. Suzuki, and Y. Ishibashi: Jpn. J. Appl. Phys. 41 (2002) 7007.
31. N. Yasuda, H. Ohwa, M. Kume, K. Hayashi, Y. Hosono, and Y. Yamashita: J. Cryst. Growth 229 (2001) 299.
32. A. Hagimura and K. Uchino: Ferroelectrics 93 (1989) 373.
33. Y. H. Chen and D. Viehland: Appl. Phys. Lett. 77 (2000) 133.
34. W. Ge, H. Liu, Z. Xiangyong, P. Xiaoming, T. He, L. Di, H. Xu, and L. Haosu: J. Alloys Compd. 456 (2008) 503.
35. Q. Tan and D. Viehland: Phys. Rev. B 53 (1996) 14103.
36. H. Nagata, T. Shinya, Y. Hiruma, T. Takenaka, I. Sakaguchi, and H. Haneda: Ceram. Trans. 167 (2005) 213.