GaN as a neutron detection material

Conference Proceedings - IEEE SOUTHEASTCON

Volumn , Issue , 2010, Pages 402-403

  Melton, Andrew ^a   Burgett, Eric ^a   Jamil, Muhammad ^a   Zaidi, Tahir ^a   Hertel, Nolan ^a   Ferguson, Ian ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b University of North Carolina at Charlotte   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; NEUTRON DETECTORS; NEUTRONS;

DOPED FILMS; GAN FILM; HALL EFFECT MEASUREMENT; HRXRD; NEUTRON DETECTION; PROPERTY; UNDOPED FILMS;

GALLIUM NITRIDE;

EID: 77952719764     PISSN: 10910050     EISSN: 1558058X     Source Type: Conference Proceeding    
DOI: 10.1109/SECON.2010.5453842     Document Type: Conference Paper

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