Electric double layer gate field-effect transistors based on Si

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Yanase, Takashi ^a,b   Shimada, Toshihiro ^a   Hasegawa, Tetsuya ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DOUBLE LAYER; FAST RESPONSE; GATE BIAS; RESPONSE TIME; SINGLE-CRYSTAL SI; SPEED-UPS; STEP-FUNCTION;

CHOPPERS (CIRCUITS); DRAIN CURRENT; DYNAMIC RESPONSE; ELECTRIC SWITCHGEAR; ELECTROCHEMISTRY; ETHYLENE; ETHYLENE GLYCOL; IONIC LIQUIDS; IONIZATION OF LIQUIDS; MESFET DEVICES; POLYETHYLENE GLYCOLS; POLYETHYLENE OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SINGLE CRYSTALS;

FIELD EFFECT TRANSISTORS;

EID: 77952713715     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DK06     Document Type: Article

References (3)

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3. K. Ueno, S. Nakamura, H. Shimotani, Y. Iwasa, and M. Kawasaki: Nat. Mater. 7 (2008) 855