Superconductivity of hexagonal heavily-boron doped silicon carbide

Journal of Physics: Conference Series

Volumn 150, Issue 5, 2009, Pages

  Kriener, M ^a   Muranaka, T ^b   Z A Ren, ^b   Kato, J ^b   Akimitsu, J ^b   Maeno, Y ^a  

^a KYOTO UNIVERSITY   (Japan)

^b AOYAMA GAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON CARBIDE; SILICON; SILICON CARBIDE; SPECIFIC HEAT; SPECIFIC HEAT OF SOLIDS; SUPERCONDUCTING MATERIALS; TEMPERATURE DISTRIBUTION;

BORON DOPED DIAMOND; BORON-DOPED SILICON; ELECTRONIC SPECIFIC HEAT; SUPER CONDUCTING PHASIS; SUPERCONDUCTING STATE; TEMPERATURE DEPENDENCE; TYPE II SUPERCONDUCTORS; WIDE-GAP SEMICONDUCTOR;

WIDE BAND GAP SEMICONDUCTORS;

EID: 77952523876     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/150/5/052130     Document Type: Conference Paper

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