Gate-voltage dependence of Kondo effect in a triangular quantum dot

Journal of Physics: Conference Series

Volumn 150, Issue 2, 2009, Pages

  Numata, T ^a   Nisikawa, Y ^a   Oguri, A ^a   Hewson, C ^b  

^a Osaka Prefecture University   (Japan)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

KONDO EFFECT; MAGNETIC SUSCEPTIBILITY; NANOCRYSTALS; STATISTICAL MECHANICS; TEMPERATURE DISTRIBUTION; THRESHOLD VOLTAGE;

CONDUCTION ELECTRONS; FOUR ELECTRONS; NONINTERACTING; NUMERICAL RENORMALIZATION GROUPS; SPIN SUSCEPTIBILITY; TEMPERATURE DEPENDENCE; TRIPLE QUANTUM; TWO TERMINALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77952496132     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/150/2/022067     Document Type: Conference Paper

References (8)

1. Vidan A, Westervelt R M, Stopa M, Hanson M and Gossard A C 2004 Appl. Phys. Lett. 85 3602
2. Kuzmenko T, Kikoin K and Avishai Y 2006 Phys. Rev. Lett. 96 046601
3. Oguri A, Nisikawa Y, Tanaka Y and Numata T 2007 J. Magn. Magn. Mater. 310 1139
4. Krishna-murth H R, Wilkins J W and Wilson K G 1980 Phys. Rev. B 21 1003
5. Oguri A, Nisikawa Y and Hewson A C 2005 J. Phys. Soc. Japan. 74 2554
6. Oguri A and Hewson A C 2005 J. Phys. Soc. Japan. 74 988
7. Oguri A and Hewson A C 2006 Erratum 75 128001
8. Nisikawa Y and Oguri A 2006 Phys. Rev. B 73 125108