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Volumn 48, Issue 4 PART 2, 2009, Pages
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Electrical properties of 4h-silicon carbide complementary metal-oxide-semiconductor devices with wet-processed gate oxide
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Author keywords
[No Author keywords available]
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Indexed keywords
4H SILICON CARBIDE;
BURIED CHANNELS;
CHANNEL PROPERTY;
CMOS DEVICES;
CMOS INVERTERS;
COMPLEMENTARY METAL OXIDE SEMICONDUCTORS;
DYNAMIC CHARACTERISTICS;
ELECTRICAL PROPERTY;
GATE OXIDATION;
GATE OXIDE;
MOSFETS;
N-CHANNEL;
NMOSFETS;
P-CHANNEL MOS;
P-MOSFETS;
RING OSCILLATOR;
STABLE OPERATION;
TEMPERATURE DEPENDENCE;
TRANSFER CHARACTERISTICS;
CMOS INTEGRATED CIRCUITS;
DIELECTRIC DEVICES;
ELECTRIC BREAKDOWN;
ELECTRIC PROPERTIES;
FIELD EFFECT TRANSISTORS;
GATE DIELECTRICS;
MOS DEVICES;
MOSFET DEVICES;
OSCILLATORS (ELECTRONIC);
OXIDATION;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICON CARBIDE;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 77952492315
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.48.04C087 Document Type: Article |
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Times cited : (19)
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References (14)
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