High field ESR of P-doped Si for quantum computing application

Journal of Physics: Conference Series

Volumn 150, Issue 2, 2009, Pages

  Song, M ^a   Jeong, M ^a   Ueno, T ^b   Kang, B ^a   Sugiyama, K ^c   Tanaka, K ^c   Matsubara, A ^d   Lee, S ^a   Mitsudo, S ^c   Mizusaki, T ^d,e   Chiba, M ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b KYOTO UNIVERSITY   (Japan)

^c UNIVERSITY OF FUKUI   (Japan)

^d KYOTO UNIVERSITY   (Japan)

^e TOYOTA PHYSICAL AND CHEMICAL RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; PHOSPHORUS; QUANTUM COMPUTERS; SPIN DYNAMICS;

DYNAMIC NUCLEAR POLARIZATION; FIELD MODULATION; HIGH MAGNETIC FIELDS; LOW CONCENTRATIONS; MAXIMUM INTENSITIES; PHOSPHOROUS DOPED SILICON; QUANTUM COMPUTING; SATURATION EFFECTS;

ELECTRON SPIN RESONANCE SPECTROSCOPY;

EID: 77952484341     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/150/2/022078     Document Type: Conference Paper

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