SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

Nanoscaling of phase change memory cells for high speed memory applications

(7) Wang, Weijie a Shi, Luping a Zhao, Rong a Loke, Desmond b Lim, Kim Guan a Lee, Hock Koon a Chong, Tow Chong a,c

a DATA STORAGE INSTITUTE (Singapore)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

c NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CELL DIMENSIONS; FREE CARRIERS; HIGH-SPEED MEMORY; MATERIAL INTERFACES; MEMORY DEVICE; NANO-SCALING; NEW APPROACHES; NON-VOLATILE; PHASE CHANGE; PHASE CHANGE MEMORY CELLS; PHASE SWITCHING; SWITCHING SPEED; ULTRA-FAST; ULTRAFAST SWITCHING;

SPEED; SWITCHING;

PHASE CHANGE MEMORY;

EID: 77952418311 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.04C060 Document Type: Article

Times cited : (7)

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