Hybrid FDSOI/Bulk high-k/Metal gate platform for Low Power (LP) multimedia technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Fenouillet Beranger, C ^a,b   Perreau, P ^a,b   Pham Nguyen, L ^a,c   Denorme, S ^a   Andrieu, F ^b   Tosti, L ^b   Brevard, L ^b   Weber, O ^b   Barnola, S ^b   Salvetat, T ^b   Garros, X ^b   Casse M ^b   Leroux, C ^b   Noel, J P ^b   Thomas, O ^b   Le Gratiet, B ^a   Baron, F ^a   Gatefait, M ^a   Campidelli, Y ^a   Abbate, F ^a   Perrot, C ^a   De Buttet, C ^a,b   Beneyton, R ^a   Pinzelli, L ^a   Leverd, F ^a   Gouraud, P ^a   Gros Jean, M ^a   Bajolet, A ^a   Mezzomo, C ^a   Leyris, C ^a   Haendler, S ^a   Noblet, D ^a   Pantel, R ^a   Margain, A ^a   Borowiak, C ^a   Josse, E ^a   Planes, N ^a   Delprat, D ^d   Boedt, F ^d   Bourdelle, K ^d   Nguyen, B Y ^d   Boeuf, F ^a   Faynot, O ^b   Skotnicki, T ^a   more..

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c MINATEC   (France)

^d PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BURIED OXIDES; COINTEGRATION; DELAY IMPROVEMENTS; DUAL GATE OXIDE; INTEGRATED DEVICE; LOW POWER; METAL GATE; MULTIMEDIA TECHNOLOGIES; RING OSCILLATOR; ULTRA-THIN;

ELECTRON DEVICES;

OSCILLATORS (ELECTRONIC);

EID: 77952375597     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424251     Document Type: Conference Paper

References (0)