Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Tada, M ^a   Sakamoto, T ^a   Tsuji, Y ^a   Banno, N ^a   Saito, Y ^a   Yabe, Y ^a   Ishida, S ^a   Terai, M ^a   Kotsuji, S ^a   Iguchi, N ^a   Aono, M ^b   Hada, H ^a   Kasai, N ^a  

^a NEC CORPORATION   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CROSSBAR SWITCH; CU INTERCONNECT; CYCLING ENDURANCE; DUAL LAYER; IONIC CONDUCTOR; LOW COSTS; LOW POWER; NANOBRIDGE; NON-VOLATILE; NONVOLATILE SOLIDS; ON-RESISTANCE; OXYGEN ABSORBERS; RECONFIGURABLE LOGIC; RESISTANCE RATIO; SELECT TRANSISTOR; STANDARD CMOS; SWITCH ELEMENT;

CROSSBAR EQUIPMENT; ELECTROLYTES; ELECTRON DEVICES; OXYGEN; SWITCHING NETWORKS;

POTENTIOMETRIC SENSORS;

EID: 77952344227     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424287     Document Type: Conference Paper

References (4)

1. N. Banno, et al., IEEE IRPS Symp., P395 (2009)
2. S. Kaeriyama, et al., J. of Solid State Circuits 40, 168 (2005).
3. T. Sakamoto, et al., IEEE VLSI Symp., P130 (2009).
4. W. Wong, et al., IEEE IEDM, 785 (2006).