Scalability of TiN/HfAlO/TiN MIM DRAM capacitor to 0.7-nm-EOT and beyond

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Mise, N ^a   Tonomura, O ^a   Sekiguchi, T ^a   Horii, S ^b   Itatani, H ^b   Ogawa, A ^b   Saito, T ^b   Sakai, M ^b   Takebayashi, Y ^b   Yamazaki, H ^b   Torii, K ^a  

^a HITACHI LTD   (Japan)

^b HITACHI KOKUSAI ELECTRIC INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRAM CAPACITOR; GUIDING PRINCIPLES; MATERIAL SELECTION; MIM CAPACITORS; TIN ELECTRODES; TUNNELING BARRIER HEIGHTS; ULTRA-THIN;

CAPACITANCE; CAPACITORS; ELECTRON DEVICES; HAFNIUM COMPOUNDS; TITANIUM NITRIDE;

MIM DEVICES;

EID: 77952341535     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424373     Document Type: Conference Paper

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