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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 3, 2010, Pages 394-399

Residual stress stability in fiber textured stoichiometric AlN film grown using rf magnetron sputtering

(8) Sah, R E a Kirste, L a Baeumler, M a Hiesinger, P a Cimalla, V a Lebedev, V a Baumann, H b Zschau, H E c

a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

b GOETHE UNIVERSITY (Germany)

c KARL WINNACKER INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALN FILMS; ALUMINUM NITRIDE THIN FILMS; AS-GROWN; DEPOSITION PARAMETERS; GAAS(001); IN-FIBER; MECHANICAL STRESS; NITROGEN-RICH FILMS; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SEMI-INSULATING; SI (001) SUBSTRATE; SI-GAAS; STOICHIOMETRIC FILMS; STRESS CHANGES; SUBSEQUENT COOLING; SUBSTRATE MATERIAL; THERMAL CYCLE; THERMALLY INDUCED STRESS;

ALUMINUM NITRIDE; GALLIUM ARSENIDE; HEATING; MAGNETRON SPUTTERING; NITRIDES; RESIDUAL STRESSES; SEMICONDUCTING GALLIUM; SILICON; SUBSTRATES; THERMAL CYCLING;

GALLIUM ALLOYS;

EID: 77952325042 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3360299 Document Type: Article

Times cited : (44)

References (43)

1
- 24944510539
- DDBPE8 1012-0394,. 10.4028/www.scientific.net/SSP.107.43
- T. Matsutani, M. Kiuchi, K. Shirouzu, A. Yoshioka, R. Shimizu, and S. Takahashi, Solid State Phenom. DDBPE8 1012-0394 107, 43 (2005). 10.4028/www.scientific.net/SSP.107.43
- (2005) Solid State Phenom. , vol.107 , pp. 43
- Matsutani, T.¹ Kiuchi, M.² Shirouzu, K.³ Yoshioka, A.⁴ Shimizu, R.⁵ Takahashi, S.⁶

2
- 79955992195
- Surface acoustic wave propagation in aluminum nitride-unpolished freestanding diamond structures
- DOI 10.1063/1.1503875
- V. Mortet, O. Elmazria, M. Nesladek, M. B. Assouar, G. Vanhoyland, J. D'Haen, M. D'Olieslaeger, and P. Alnot, Appl. Phys. Lett. APPLAB 0003-6951 81, 1720 (2002). 10.1063/1.1503875 (Pubitemid 35037797)
- (2002) Applied Physics Letters , vol.81 , Issue.9 , pp. 1720
- Mortet, V.¹ Elmazria, O.² Nesladek, M.³ Assouar, M.B.⁴ Vanhoyland, G.⁵ D'Haen, J.⁶ D'Olieslaeger, M.⁷ Alnot, P.⁸

3
- 0000281515
- APPLAB 0003-6951,. 10.1063/1.120052
- A. T. Sowers, J. A. Christman, M. D. Bremser, B. L. Ward, R. F. Davis, and R. J. Nemanich, Appl. Phys. Lett. APPLAB 0003-6951 71, 2289 (1997). 10.1063/1.120052
- (1997) Appl. Phys. Lett. , vol.71 , pp. 2289
- Sowers, A.T.¹ Christman, J.A.² Bremser, M.D.³ Ward, B.L.⁴ Davis, R.F.⁵ Nemanich, R.J.⁶

4
- 0032181962
- JPAPBE 0022-3727,. 10.1088/0022-3727/31/20/001
- O. Ambacher, J. Phys. D JPAPBE 0022-3727 31, 2653 (1998). 10.1088/0022-3727/31/20/001
- (1998) J. Phys. D , vol.31 , pp. 2653
- Ambacher, O.¹

5
- 33745627020
- An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
- DOI 10.1038/nature04760, PII NATURE04760
- Y. Taniyasu, M. Kasu, and T. Makimoto, Nature (London) NATUAS 0028-0836 441, 325 (2006). 10.1038/nature04760 (Pubitemid 44050193)
- (2006) Nature , vol.441 , Issue.7091 , pp. 325-328
- Taniyasu, Y.¹ Kasu, M.² Makimoto, T.³

6
- 33845453636
- 200 nm deep ultraviolet photodetectors based on AlN
- DOI 10.1063/1.2397021
- J. Li, Z. Y. Fan, R. Dahal, M. l. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. APPLAB 0003-6951 89, 213510 (2006). 10.1063/1.2397021 (Pubitemid 44892321)
- (2006) Applied Physics Letters , vol.89 , Issue.21 , pp. 213510
- Li, J.¹ Fan, Z.Y.² Dahal, R.³ Nakarmi, M.L.⁴ Lin, J.Y.⁵ Jiang, H.X.⁶

7
- 0342426904
- JVSTAL 0022-5355,. 10.1116/1.1492658
- A. J. Noreika, M. H. Fracombe, and S. A. Zeitman, J. Vac. Sci. Technol. JVSTAL 0022-5355 6, 194 (1969). 10.1116/1.1492658
- (1969) J. Vac. Sci. Technol. , vol.6 , pp. 194
- Noreika, A.J.¹ Fracombe, M.H.² Zeitman, S.A.³

8
- 77952335767
- JJAPA5 0021-4922.
- T. Shiosaki, T. Yamamoto, T. Oda, K. Harada, and A. Kawabata, Jpn. J. Appl. Phys. JJAPA5 0021-4922 20, 149 (1980).
- (1980) Jpn. J. Appl. Phys. , vol.20 , pp. 149
- Shiosaki, T.¹ Yamamoto, T.² Oda, T.³ Harada, K.⁴ Kawabata, A.⁵

9
- 30244508154
- JAPIAU 0021-8979.
- T. Hata, F. Takeda, O. Morimoto, E. Noda, and T. Hada J. Appl. Phys. JAPIAU 0021-8979 20, 145 (1980).
- (1980) J. Appl. Phys. , vol.20 , pp. 145
- Hata, T.¹ Takeda, F.² Morimoto, O.³ Noda, E.⁴ Hada, T.⁵

10
- 0019535526
- JVSTAL 0022-5355,. 10.1116/1.571470
- R. McMahon, J. Affinito, and R. Parsons, J. Vac. Sci. Technol. JVSTAL 0022-5355 20, 376 (1982). 10.1116/1.571470
- (1982) J. Vac. Sci. Technol. , vol.20 , pp. 376
- McMahon, R.¹ Affinito, J.² Parsons, R.³

11
- 0022115013
- IESUAU 0018-9537.
- K. Tsubouchi and N. Mikoshiba, IEEE Trans. Sonics Ultrason. IESUAU 0018-9537 SU-32, 634 (1985).
- (1985) IEEE Trans. Sonics Ultrason. , vol.32 , pp. 634
- Tsubouchi, K.¹ Mikoshiba, N.²

12
- 0029307045
- APPLAB 0003-6951,. 10.1063/1.114242
- P. Kung, A. Saxler, X. Zhang, D. Walker, T. C. Wang, I. Ferguson, and M. Razeghi, Appl. Phys. Lett. APPLAB 0003-6951 66, 2958 (1995). 10.1063/1.114242
- (1995) Appl. Phys. Lett. , vol.66 , pp. 2958
- Kung, P.¹ Saxler, A.² Zhang, X.³ Walker, D.⁴ Wang, T.C.⁵ Ferguson, I.⁶ Razeghi, M.⁷

13
- 5944240962
- APPLAB 0003-6951,. 10.1063/1.118450
- D. Walker, X. Zhang, A. Saxler, P. Kung, and M. Razeghi, Appl. Phys. Lett. APPLAB 0003-6951 70, 949 (1997). 10.1063/1.118450
- (1997) Appl. Phys. Lett. , vol.70 , pp. 949
- Walker, D.¹ Zhang, X.² Saxler, A.³ Kung, P.⁴ Razeghi, M.⁵

14
- 30344432693
- MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates
- DOI 10.1016/j.jcrysgro.2005.10.119, PII S0022024805012376
- M. A. Mastro, J. Cryst. Growth JCRGAE 0022-0248 287, 610 (2006). 10.1016/j.jcrysgro.2005.10.119 (Pubitemid 43069704)
- (2006) Journal of Crystal Growth , vol.287 , Issue.2 , pp. 610-614
- Mastro, M.A.¹ Eddy Jr., C.R.² Gaskill, D.K.³ Bassim, N.D.⁴ Casey, J.⁵ Rosenberg, A.⁶ Holm, R.T.⁷ Henry, R.L.⁸ Twigg, M.E.⁹

15
- 0027658820
- JMREEE 0884-2914,. 10.1557/JMR.1993.2310
- L. B. Rowland, R. S. Kern, S. Tanaka, and R. F. Davis, J. Mater. Res. JMREEE 0884-2914 8, 2310 (1993). 10.1557/JMR.1993.2310
- (1993) J. Mater. Res. , vol.8 , pp. 2310
- Rowland, L.B.¹ Kern, R.S.² Tanaka, S.³ Davis, R.F.⁴

16
- 36449006640
- APPLAB 0003-6951,. 10.1063/1.112359
- K. S. Stevens, A. Ohtani, M. Kinniburgh, and R. Beresford, Appl. Phys. Lett. APPLAB 0003-6951 65, 321 (1994). 10.1063/1.112359
- (1994) Appl. Phys. Lett. , vol.65 , pp. 321
- Stevens, K.S.¹ Ohtani, A.² Kinniburgh, M.³ Beresford, R.⁴

17
- 5944262503
- APPLAB 0003-6951,. 10.1063/1.119408
- N. Grandjean and J. Messies, Appl. Phys. Lett. APPLAB 0003-6951 71, 1816 (1997). 10.1063/1.119408
- (1997) Appl. Phys. Lett. , vol.71 , pp. 1816
- Grandjean, N.¹ Messies, J.²

18
- 0032614509
- APPLAB 0003-6951,. 10.1063/1.124423
- S. A. Nikishin, Appl. Phys. Lett. APPLAB 0003-6951 75, 484 (1999). 10.1063/1.124423
- (1999) Appl. Phys. Lett. , vol.75 , pp. 484
- Nikishin, S.A.¹

19
- 20744432498
- Effect of nanoscale surface morphology on the phase stability of 3C-AlN films on Si(111)
- DOI 10.1063/1.1915535, 114306
- V. Lebedev, V. Cimalla, U. Kaiser, Ch. Foerster, J. Pezoldt, J. Biskupek, and O. Ambacher, J. Appl. Phys. JAPIAU 0021-8979 97, 114306 (2005). 10.1063/1.1915535 (Pubitemid 40850276)
- (2005) Journal of Applied Physics , vol.97 , Issue.11 , pp. 1-6
- Lebedev, V.¹ Cimalla, V.² Kaiser, U.³ Foerster, Ch.⁴ Pezoldt, J.⁵ Biskupek, J.⁶ Ambacher, O.⁷

20
- 0001415536
- JAPIAU 0021-8979,. 10.1063/1.349352
- M. G. Norton, P. G. Kotula, and C. B. Carter, J. Appl. Phys. JAPIAU 0021-8979 70, 2871 (1991). 10.1063/1.349352
- (1991) J. Appl. Phys. , vol.70 , pp. 2871
- Norton, M.G.¹ Kotula, P.G.² Carter, C.B.³

21
- 36449003619
- APPLAB 0003-6951,. 10.1063/1.107040
- K. Seki, X. Xu, H. Okabe, J. M. Frye, and J. B. Harpern, Appl. Phys. Lett. APPLAB 0003-6951 60, 2234 (1992). 10.1063/1.107040
- (1992) Appl. Phys. Lett. , vol.60 , pp. 2234
- Seki, K.¹ Xu, X.² Okabe, H.³ Frye, J.M.⁴ Harpern, J.B.⁵

22
- 0026838201
- APPLAB 0003-6951.
- S. R. Nishitani, S. Yoshimura, and Y. T. Chang, Appl. Phys. Lett. APPLAB 0003-6951 7, 725 (1992).
- (1992) Appl. Phys. Lett. , vol.7 , pp. 725
- Nishitani, S.R.¹ Yoshimura, S.² Chang, Y.T.³

23
- 0029307142
- JAPIAU 0021-8979,. 10.1063/1.359441
- R. D. Vispute, J. Narayan, H. Wu, and K. Jagannadham, J. Appl. Phys. JAPIAU 0021-8979 77, 4724 (1995). 10.1063/1.359441
- (1995) J. Appl. Phys. , vol.77 , pp. 4724
- Vispute, R.D.¹ Narayan, J.² Wu, H.³ Jagannadham, K.⁴

24
- 33745475057
- Enhanced electron field emission from oriented columnar AIN and mechanism
- DOI 10.1063/1.2216353
- A. P. Huang, P. K. Chu, and X. L. Wu, Appl. Phys. Lett. APPLAB 0003-6951 88, 251103 (2006). 10.1063/1.2216353 (Pubitemid 43954770)
- (2006) Applied Physics Letters , vol.88 , Issue.25 , pp. 251103
- Huang, A.P.¹ Chu, P.K.² Wu, X.L.³

25
- 2442553906
- Influence of oxygen and argon on the crystal quality and piezoelectric response of AlN sputtered thin films
- DOI 10.1016/j.diamond.2003.10.063, PII S0925963503004709
- L. Vergara, M. Clement, E. Iborra, A. Sanz-Hervás, J. García Lopez, Y. Morilla, J. Sangrador, and M. A. Respaldiza, Diamond Relat. Mater. DRMTE3 0925-9635 13, 839 (2004). 10.1016/j.diamond.2003.10.063 (Pubitemid 38616377)
- (2004) Diamond and Related Materials , vol.13 , Issue.4-8 , pp. 839-842
- Vergara, L.¹ Clement, M.² Iborra, E.³ Sanz-Hervas, A.⁴ Garcia Lopez, J.⁵ Morilla, Y.⁶ Sangrador, J.⁷ Respaldiza, M.A.⁸

26
- 84956096180
- JVTAD6 0734-2101,. 10.1116/1.574480
- G. Este and W. D. Westwood, J. Vac. Sci. Technol. A JVTAD6 0734-2101 5, 1892 (1987). 10.1116/1.574480
- (1987) J. Vac. Sci. Technol. A , vol.5 , pp. 1892
- Este, G.¹ Westwood, W.D.²

27
- 0000983001
- JAPIAU 0021-8979,. 10.1063/1.354701
- W. J. Meng, J. A. Sell, G. L. Eesley, and T. A. Perry, J. Appl. Phys. JAPIAU 0021-8979 74, 2411 (1993). 10.1063/1.354701
- (1993) J. Appl. Phys. , vol.74 , pp. 2411
- Meng, W.J.¹ Sell, J.A.² Eesley, G.L.³ Perry, T.A.⁴

28
- 0025417076
- Three-dimensional micromachining of silicon pressure sensor integrating resonant strain gauge on diaphragm
- DOI 10.1016/0924-4247(90)87078-W
- K. Ikeda, H. Kuwayama, T. Kobayashi, T. Watanabe, T. Nishikawa, T. Yoshida, and K. Harada, Sens., Actuators A 23, 1007 (1990). 10.1016/0924- 4247(90)87078-W (Pubitemid 20699670)
- (1990) Sensors and Actuators, A: Physical , vol.23 , Issue.1-3 , pp. 1007-1010
- Ikeda Kyoichi¹ Kuwayama Hideki² Kobayashi Takashi³ Watanabe Teysuya⁴ Nishikawa Tadashi⁵ Yoshida Takashi⁶ Harada Kinji⁷

29
- 0029201842
- Proceedings of MEMS '95, Amsterdam, (unpublished)
- T. Yoshida, T. Kudo, S. Kato, S. Miyazaki, S. Kiyono, and K. Ikeda, Proceedings of MEMS '95, Amsterdam, 1995 (unpublished), pp 316-321.
- (1995) , pp. 316-321
- Yoshida, T.¹ Kudo, T.² Kato, S.³ Miyazaki, S.⁴ Kiyono, S.⁵ Ikeda, K.⁶

30
- 0033528937
- MSBTEK 0921-5107,. 10.1016/S0921-5107(98)00391-2
- N. Herres, H. Obloh, K. H. Bachem, and K. Helming, Mater. Sci. Eng., B MSBTEK 0921-5107 59, 202 (1999). 10.1016/S0921-5107(98)00391-2
- (1999) Mater. Sci. Eng., B , vol.59 , pp. 202
- Herres, N.¹ Obloh, H.² Bachem, K.H.³ Helming, K.⁴

31
- 0037828844
- in, edited by J. R. Tesmerand and M. Nastasi (Materials Research Society, Pittsburgh),.
- J. A. Leavitt and L. C. McIntyre, Jr., in Handbook of Modern Ion Beam Materials Analysis, edited by, J. R. Tesmerand, and, M. Nastasi, (Materials Research Society, Pittsburgh, 1995), p. 39.
- (1995) Handbook of Modern Ion Beam Materials Analysis , pp. 39
- Leavitt, J.A.¹ Mcintyre Jr., L.C.²

32
- 36149024570
- PRVAAH 0096-8250,. 10.1103/PhysRev.112.1217
- D. F. Herring, Phys. Rev. PRVAAH 0096-8250 112, 1217 (1958). 10.1103/PhysRev.112.1217
- (1958) Phys. Rev. , vol.112 , pp. 1217
- Herring, D.F.¹

33
- 0022041248
- NIMBEU 0168-583X,. 10.1016/0168-583X(86)90291-0
- L. R. Doolittle, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 15, 227 (1986). 10.1016/0168-583X(86)90291-0
- (1986) Nucl. Instrum. Methods Phys. Res. B , vol.15 , pp. 227
- Doolittle, L.R.¹

34
- 0038166593
- L. Pfeffer, G. J. Geradi, R. A. Lux, K. A. Jones, E. H. Poindexter, W. H. Chang, and R. A. B. Devine, Mat. Res. Soc. Symp. Proc. 165, 227 (1990).
- (1990) Mat. Res. Soc. Symp. Proc. , vol.165 , pp. 227
- Pfeffer, L.¹ Geradi, G.J.² Lux, R.A.³ Jones, K.A.⁴ Poindexter, E.H.⁵ Chang, W.H.⁶ Devine, R.A.B.⁷

35
- 0000073841
- PRLAAZ 0950-1207,. 10.1098/rspa.1909.0021
- G. G. Stoney, Proc. R. Soc. London, Ser. A PRLAAZ 0950-1207 82, 172 (1909). 10.1098/rspa.1909.0021
- (1909) Proc. R. Soc. London, Ser. A , vol.82 , pp. 172
- Stoney, G.G.¹

36
- 0019047567
- Elastic stiffness and thermal expansion coefficients of various refractory silicides and silicon nitride films
- DOI 10.1016/0040-6090(80)90364-8
- T. F. Retajczyk, Jr. and A. K. Sinha, Thin Solid Films THSFAP 0040-6090 70, 241 (1980). 10.1016/0040-6090(80)90364-8 (Pubitemid 11455452)
- (1980) Thin Solid Films , vol.70 , Issue.2 , pp. 241-247
- Retajczyk Jr., T.F.¹ Sinha, A.K.²

37
- 0007183370
- JAPIAU 0021-8979,. 10.1063/1.345779
- A. Lahav, K. A. Grim, and I. A. Blech, J. Appl. Phys. JAPIAU 0021-8979 67, 734 (1990). 10.1063/1.345779
- (1990) J. Appl. Phys. , vol.67 , pp. 734
- Lahav, A.¹ Grim, K.A.² Blech, I.A.³

38
- 36049011211
- Group III nitride and SiC based MEMS and NEMS: Materials properties, technology and applications
- DOI 10.1088/0022-3727/40/20/S19, PII S0022372707430273
- V. Cimalla, J. Pezoldt, and O. Ambacher, J. Phys. D: Appl. Phys. JPAPBE 0022-3727 40, 6386 (2007). 10.1088/0022-3727/40/20/S19 (Pubitemid 350093023)
- (2007) Journal of Physics D: Applied Physics , vol.40 , Issue.20 , pp. 6386-6434
- Cimalla, V.¹ Pezoldt, J.² Ambacher, O.³

39
- 0000096595
- JAPIAU 0021-8979,. 10.1063/1.367101
- C. M. Herzinger, B. Johs, W. McGahan, J. A. Woolam, and W. Paulson, J. Appl. Phys. JAPIAU 0021-8979 83, 3323 (1998). 10.1063/1.367101
- (1998) J. Appl. Phys. , vol.83 , pp. 3323
- Herzinger, C.M.¹ Johs, B.² McGahan, W.³ Woolam, J.A.⁴ Paulson, W.⁵

40
- 1342318416
- THSFAP 0040-6090,. 10.1016/S0040-6090(97)00800-6
- B. Johs, C. M. Herzinger, J. H. Dinan, A. Cornfeld, and J. D. Benson, Thin Solid Films THSFAP 0040-6090 313-314, 137 (1998). 10.1016/S0040-6090(97) 00800-6
- (1998) Thin Solid Films , vol.313-314 , pp. 137
- Johs, B.¹ Herzinger, C.M.² Dinan, J.H.³ Cornfeld, A.⁴ Benson, J.D.⁵

41
- 84860110539
- edited by J. Piprek (Wiley, Weinheim).
- R. Goldhahn, C. Buchheim, P. Schley, A. T. Winzer, and H. Wenzel, Nitride Semiconductor Devices: Principles and Simulation, edited by, J. Piprek, (Wiley, Weinheim, 2007).
- (2007) Nitride Semiconductor Devices: Principles and Simulation
- Goldhahn, R.¹ Buchheim, C.² Schley, P.³ Winzer, A.T.⁴ Wenzel, H.⁵

42
- 0001495657
- JAPIAU 0021-8979,. 10.1063/1.366114
- A. F. Wright, J. Appl. Phys. JAPIAU 0021-8979 82, 2833 (1997). 10.1063/1.366114
- (1997) J. Appl. Phys. , vol.82 , pp. 2833
- Wright, A.F.¹

43
- 0032615192
- APPLAB 0003-6951,. 10.1063/1.124055
- M. -A. Dubois and P. Muralt, Appl. Phys. Lett. APPLAB 0003-6951 74, 3032 (1999). 10.1063/1.124055
- (1999) Appl. Phys. Lett. , vol.74 , pp. 3032
- Dubois, M.-A.¹ Muralt, P.²

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