Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate

Technical Physics Letters

Volumn 36, Issue 4, 2010, Pages 365-368

  Marem'yanin, K V ^a,b,c,d   Ermolaev, D M ^a,b,c,d   Fateev, D V ^a,b,c,d   Morozov, S V ^a,b,c,d   Maleev, N A ^a,b,c,d   Zemlyakov, V E ^a,b,c,d   Gavrilenko, V I ^a,b,c,d   Popov, V V ^a,b,c,d   Shapoval, S Yu ^a,b,c,d  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^c INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77952255857     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/S106378501004022X     Document Type: Article

References (16)

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