Defect-induced reversible ferromagnetism in hydrogenated ZnO:Co

Journal of Magnetism and Magnetic Materials

Volumn 322, Issue 15, 2010, Pages 2187-2190

  Singhal, R K ^a   Samariya, A ^a   Kumar, Sudhish ^b   Xing, Y T ^c   Deshpande, U P ^d   Shripathi, T ^d   Baggio Saitovitch, E ^c  

^a UNIVERSITY OF RAJASTHAN   (India)

^b M L SUKHADIA UNIVERSITY   (India)

^c CENTRO BRASILEIRO DE PESQUISAS FÍSICAS   (Brazil)

^d UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

Author keywords

Diluted magnetic semiconductor; Hydrogenation; Oxygen vacancy; Spectroscopy; X ray photoelectron

Indexed keywords

DILUTED MAGNETIC SEMICONDUCTOR; DILUTED MAGNETIC SEMICONDUCTORS; HYDROGEN ANNEALING TREATMENT; MAGNETIC TRANSITIONS; ROOM TEMPERATURE FERROMAGNETISM; SECONDARY PHASIS; STRUCTURAL DEVIATIONS; X-RAY PHOTOELECTRONS; XRD; ZNO;

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; FERROMAGNETISM; HYDROGEN; HYDROGENATION; MAGNETIC SEMICONDUCTORS; OXYGEN; PELLETIZING; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; TRANSPORT PROPERTIES; VACANCIES; ZINC OXIDE;

OXYGEN VACANCIES;

EID: 77952106361     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2010.02.007     Document Type: Article

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