|
Volumn 1165, Issue , 2010, Pages 343-348
|
Chemically deposited silver antimony selenide thin films for photovoltaic applications
a a a a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALING TEMPERATURES;
ANTIMONY SELENIDE;
ANTIMONY SULPHIDE;
CDS;
CHEMICAL BATH;
CHEMICAL-BATH DEPOSITION;
CLEANED GLASS SUBSTRATES;
ELECTRICAL CHARACTERIZATION;
ELEMENTAL ANALYSIS;
ENERGY DISPERSIVE X-RAY TECHNIQUE;
IN-VACUUM;
J-V CHARACTERISTICS;
OPTICAL CHARACTERIZATION;
OPTICAL TRANSMITTANCE SPECTRUM;
PHOTOCURRENT MEASUREMENT;
PHOTOVOLTAIC APPLICATIONS;
PHOTOVOLTAIC STRUCTURES;
POLYCRYSTALLINE;
ROOM TEMPERATURE;
SELENIUM THIN FILMS;
SILVER SELENIDES;
TUNGSTEN HALOGEN LAMP;
VACUUM THERMAL EVAPORATION;
ANTIMONY;
ATOMIC FORCE MICROSCOPY;
CADMIUM COMPOUNDS;
CADMIUM SULFIDE;
CHARACTERIZATION;
FILM PREPARATION;
FILM THICKNESS;
HALL EFFECT;
MAGNETIC FIELD EFFECTS;
SCANNING ELECTRON MICROSCOPY;
SELENIUM;
SEMICONDUCTING SELENIUM COMPOUNDS;
SILVER;
SODIUM;
SUBSTRATES;
THERMAL EVAPORATION;
THIN FILMS;
TUNGSTEN;
VACUUM;
VACUUM EVAPORATION;
VAPOR DEPOSITION;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
OPTICAL FILMS;
|
EID: 77952064347
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
|
References (6)
|