Chemical composition and electronic properties of CuInS2/Zn(S,O) interfaces

Materials Research Society Symposium Proceedings

Volumn 1165, Issue , 2010, Pages 101-107

  Sáez Araoz, Rodrigo ^a,c   Lauermann, Iver ^a   Neisser, Axel ^b   Lux Steiner, Martha Ch ^a,c   Ennaoui, Ahmed ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b Sulfurcell Solartechnik GmbH   (Germany)

^c FREIE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CHEMICAL COMPOSITIONS; CHEMICAL DEPOSITION; CHEMICAL-BATH DEPOSITION; CONDUCTION BAND OFFSET; ENERGY BANDGAPS; OPTICAL ENERGY BAND GAP; PRODUCTION LINE; SULFURCELL SOLARTECHNIK GMBH; VALENCE BAND OFFSETS; XPS; ZNO;

AUGER ELECTRON SPECTROSCOPY; CONDUCTION BANDS; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ENERGY GAP; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE; ZINC SULFIDE;

HETEROJUNCTIONS;

EID: 77952012954     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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