Optimum concentration of insb photodiode for minimum low reverse bias leakage current

Ukrainian Journal of Physics

Volumn 55, Issue 4, 2010, Pages 422-425

  Moradi, M ^a   Daraee, M ^a   Hajian, M ^a   Forghani, M A ^a   Rastgoo, M ^a   Alipour, A O ^a  

^a Semiconductor Component Industry   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77951757861     PISSN: 20710186     EISSN: 20710194     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

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