Effect of annealing temperature and dopant concentration on the conductivity behavior in (DyO1.5)x-(WO3) y-(BiO1.5)1-x-y

Journal of the American Ceramic Society

Volumn 93, Issue 5, 2010, Pages 1384-1391

  Jung, Doh Won ^a   Duncan, Keith L ^a   Camaratta, Matthew A ^a   Lee, Kang Taek ^a   Nino, Juan C ^a   Wachsman, Eric D ^b  

^a University of Florida   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BISMUTH OXIDES; DEGRADATION BEHAVIOR; DOPANT CONCENTRATIONS; DOPANT CONTENT; INTERMEDIATE TEMPERATURES; ISOTHERMAL OPERATIONS;

BISMUTH; ELECTROLYTES; SEMICONDUCTOR DOPING;

DEGRADATION;

EID: 77951678470     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2009.03541.x     Document Type: Article

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