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Journal of Materials Science

Volumn 45, Issue 10, 2010, Pages 2770-2774

Magnetic and transport properties of Mn3+x Ga1-x N compounds

(6) Feng, W J a,b Li, D b Deng, Y F a Zhang, Q b Zhang, H H a Zhang, Z D b

a SHENYANG NORMAL UNIVERSITY (China)

b INSTITUTE OF METAL RESEARCH (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING BEHAVIOR; ELECTRICAL RESISTIVITY; FRUSTRATED ANTIFERROMAGNETISM; LOW TEMPERATURES; MAGNETIC AND TRANSPORT PROPERTIES; MAGNETIC TRANSITIONS; N-COMPOUNDS; POSITIVE MAGNETORESISTANCE;

ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; FERROMAGNETISM; GALLIUM ALLOYS; GALLIUM NITRIDE; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MANGANESE COMPOUNDS; PARAMAGNETISM; SINTERING; STRONTIUM COMPOUNDS; TRANSPORT PROPERTIES;

MANGANESE;

EID: 77951665787 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/s10853-010-4265-2 Document Type: Article

Times cited : (17)

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