Sol-gel-derived iron oxide thin films on silicon: Surface properties and interfacial chemistry

ACS Applied Materials and Interfaces

Volumn 1, Issue 9, 2009, Pages 1843-1846

  Park, Chi Dong ^a   Walker, Jeremy ^b   Tannenbaum, Rina ^b   Stiegman, A E ^a   Frydrych, J ^c   MacHala, L ^c  

^a FLORIDA STATE UNIVERSITY   (United States)

^b Georgia Institute of Technology   (United States)

^c PALACKÝ UNIVERSITY   (Czech Republic)

Author keywords

interfacial redox reactions; iron oxide; iron oxide thin films; thermite reaction

Indexed keywords

ETCHED SURFACE; HIGH QUALITY; INTERFACIAL CHEMISTRY; INTERFACIAL REDOX REACTIONS; IRON OXIDE THIN FILMS; LAYERED STRUCTURES; METALLIC IRON; SILICON SUBSTRATES; SSBAUER SPECTROSCOPIES; SYNTHETIC PROTOCOLS; THERMAL PROCESSING; THERMITE REACTION;

DEPTH PROFILING; GELS; MOLYBDENUM; OXIDE FILMS; REDOX REACTIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SOL-GELS; SOLS; SURFACE PROPERTIES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

IRON OXIDES;

FERRIC ION; FERRIC OXIDE; IRON; SILICON;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; METHODOLOGY; MOSSBAUER SPECTROSCOPY; OXIDATION REDUCTION REACTION; PHASE TRANSITION; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; TEMPERATURE;

CHEMISTRY; FERRIC COMPOUNDS; IRON; MICROSCOPY, ATOMIC FORCE; MICROSCOPY, ELECTRON, SCANNING; OXIDATION-REDUCTION; PHASE TRANSITION; SILICON; SPECTROSCOPY, MOSSBAUER; SURFACE PROPERTIES; TEMPERATURE;

EID: 77951637393     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am900362x     Document Type: Article

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