Effect of texture morphology on the surface passivation and a-Si/c-Si heterojunction solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 000642-000645

  Jeong, DaeYoung ^a,b   Kim, ChanSeok ^a   Song, JunYong ^a   Lee, Jeong Chul ^a   Cho, Jun Sik ^a   Park, Sang Hyun ^a   Wang, Jin Suk ^b   Yoon, Kyung Hoon ^a   Song, Jinsoo ^a  

^a Korea Institute of Energy Research (KIER)   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI LAYERS; A-SI:H; CVD METHOD; DIFFERENT HEIGHTS; EFFECTIVE ABSORPTION; ELECTRICAL CHARACTERISTIC; ETCHING TIME; FILL FACTOR; HETEROJUNCTION SOLAR CELLS; KEY PARAMETERS; MINORITY CARRIER; SI SUBSTRATES; SI SURFACES; SI WAFER; SURFACE PASSIVATION; SURFACE REFLECTANCE; SURFACE-TEXTURING;

CHEMICAL VAPOR DEPOSITION; ETCHING; HETEROJUNCTIONS; LIGHT; MORPHOLOGY; OPEN CIRCUIT VOLTAGE; PASSIVATION; REFLECTION; SILICON; SILICON WAFERS; SOLAR CELLS; SUBSTRATES; SURFACE MORPHOLOGY; SWITCHING CIRCUITS; VOLATILE ORGANIC COMPOUNDS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77951612567     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411603     Document Type: Conference Paper

References (7)

1. R.A. Arndt, J.F. Allison, J.G. Haynos, A. Meulenberg, In: Proc. 11th IEEE International Photovoltaic Specialists Conference, New York, 1975, p 40.
2. Pierre Verlinden, Olivier Evrard, Emmanuel Muzy, André Crahay, Solar Energy Mater. Solar Cells 26, 1992, p. 71-78
3. PROCEEDINGS OF INTERNATIONAL CONFERENCE ON ENERGY AND ENVIRONMENT MARCH 19-21, 2009 ISSN: 2070-3740
4. th IEEE international Photovoltaic Specialist Conference, Washington, DC. 1978, 152-154
5. nd IEEE International Photovoltaic Specialist Conference, Las Vegas, 1991, 303-308
6. Vazsonyi E, et al., Improved anisotropic etching processfor industrial texturing of silicon solar cell, Solar Energy Materials & Solar Cell 1999, 57, 179-88
7. Manfred Grauvogl et al., "17.1 % Efficient truncated-pyramid inversion-layer silicon solar cells" 25th PVSC, 1996, p. 433-436