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Volumn 51, Issue 3, 2010, Pages 557-560
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Room-temperature ferromagnetism in cobalt and aluminum co-doping tin dioxide diluted magnetic semiconductors
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Author keywords
Diluted magnetic semiconductor; Ferromagnetism; Microstructure; Tin dioxide
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Indexed keywords
ANNEALING TEMPERATURES;
AS ANNEALING;
AS-DEPOSITED FILMS;
CO CLUSTERS;
CO-DOPING;
DILUTED MAGNETIC SEMICONDUCTOR;
DILUTED MAGNETIC SEMICONDUCTORS;
ELECTRICAL RESISTIVITY;
EXCHANGE MODELS;
F CENTERS;
IMPURITY PHASE;
ROOM-TEMPERATURE FERROMAGNETISM;
SILICON SUBSTRATES;
XRD;
ANNEALING;
COBALT;
COBALT COMPOUNDS;
ELECTRIC CONDUCTIVITY;
LITHIUM COMPOUNDS;
MAGNETIC SEMICONDUCTORS;
MICROSTRUCTURE;
SATURATION MAGNETIZATION;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DOPING;
TIN;
TIN DIOXIDE;
TITANIUM COMPOUNDS;
X RAY DIFFRACTION;
FERROMAGNETISM;
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EID: 77951606343
PISSN: 13459678
EISSN: None
Source Type: Journal
DOI: 10.2320/matertrans.M2009373 Document Type: Article |
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Times cited : (7)
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References (21)
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