메뉴 건너뛰기




Volumn , Issue , 2010, Pages 229-238

Degradation in FPGAs: Measurement and modelling

Author keywords

FPGA; Self test

Indexed keywords

ACCELERATED LIFE TESTS; CIRCUIT DENSITY; DEGRADATION MECHANISM; EXPECTED EFFECTS; GRADUAL DEGRADATION; HOT CARRIER INJECTION; NEGATIVE BIAS TEMPERATURE INSTABILITY; PROCESS SCALING; REGULAR STRUCTURE; RELIABILITY ENHANCEMENT; SELF TEST; SHRINKING GEOMETRIES; SYSTEM LEVELS; TIMING PERFORMANCE; VLSI TECHNOLOGY;

EID: 77951583090     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/1723112.1723152     Document Type: Conference Paper
Times cited : (83)

References (9)
  • 2
    • 84945713471 scopus 로고
    • Hot-electron-induced MOSFET degradation - Model, monitor and improvement
    • Feb.
    • C. Hu et al. Hot-electron-induced MOSFET degradation - model, monitor and improvement. IEEE Trans. Electron Devices, 32(2), Feb. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.32 , Issue.2
    • Hu, C.1
  • 4
    • 40549130070 scopus 로고    scopus 로고
    • Compact modeling of MOSFET wearout mechanisms for circuit reliability simulation
    • Mar.
    • X. Li et al. Compact modeling of MOSFET wearout mechanisms for circuit reliability simulation. IEEE Trans. Device Mat. Rel., 8(1), Mar. 2008.
    • (2008) IEEE Trans. Device Mat. Rel. , vol.8 , Issue.1
    • Li, X.1
  • 5
    • 77949384320 scopus 로고    scopus 로고
    • FPGA lookup table with transmission gate structure for reliable low-voltage operation
    • US Patent No. 6667635, Dec.
    • T. Pi and P. J. Crotty. FPGA lookup table with transmission gate structure for reliable low-voltage operation. US Patent No. 6667635, Dec. 2003.
    • (2003)
    • Pi, T.1    Crotty, P.J.2
  • 7
    • 63049092018 scopus 로고    scopus 로고
    • A transition probability based delay measurement method for arbitrary circuits on FPGAs
    • J. S. J. Wong, P. Sedcole, and P. Y. K. Cheung. A transition probability based delay measurement method for arbitrary circuits on FPGAs. In Int. Conf. on Field Programmable Tech., pages 105-112, 2008.
    • (2008) Int. Conf. on Field Programmable Tech. , pp. 105-112
    • Wong, J.S.J.1    Sedcole, P.2    Cheung, P.Y.K.3
  • 8
    • 33947647140 scopus 로고    scopus 로고
    • MOSFET gate oxide reliability: Anode hole injection model and its applications
    • Y. C. Yeo et al. MOSFET gate oxide reliability: Anode hole injection model and its applications. Int. J. High Speed Electron. Syst., 11(3):849-886, 2001.
    • (2001) Int. J. High Speed Electron. Syst. , vol.11 , Issue.3 , pp. 849-886
    • Yeo, Y.C.1
  • 9
    • 33750600861 scopus 로고    scopus 로고
    • New generation of predictive technology model for sub-45nm early design exploration
    • Nov.
    • W. Zhao and Y. Cao. New generation of predictive technology model for sub-45nm early design exploration. IEEE Trans. Electron Devices, 53(11):2816-2823, Nov. 2006.
    • (2006) IEEE Trans. Electron Devices , vol.53 , Issue.11 , pp. 2816-2823
    • Zhao, W.1    Cao, Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.