InGaN solar cell design by surface inversion caused by piezoelectric polarization

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 002179-002182

  Jampana, Balakrishnam ^a   Melton, Andrew ^b   Jamil, Muhammad ^b   Ferguson, Ian ^b   Opila, Robert ^a   Honsberg, Christiana ^c  

^a UNIVERSITY OF DELAWARE   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BANDBENDING; CRYSTAL QUALITIES; DEPLETION REGION; ELECTRICAL PROPERTY; FABRICATED DEVICE; HIGH-EFFICIENCY SOLAR CELLS; III-NITRIDE; JUNCTION INTERFACES; MOCVD; P-INGAN; P-N JUNCTION; PIEZOELECTRIC POLARIZATIONS; SOLAR CELL DESIGN;

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS;

POLARIZATION;

EID: 77951546330     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411402     Document Type: Conference Paper

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