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Volumn 7616, Issue , 2010, Pages
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Ultra high power, ultra low RIN up to 20 GHz 1.55 μm DFB AlGaInAsP laser for analog applications
a
3S Photonics
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(France)
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Author keywords
1550 nm; High power; Laser diode; Low RIN; Semiconductor; Single mode
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Indexed keywords
1550 NM;
ALGAINAS;
ANALOG APPLICATIONS;
ANALOG COMMUNICATIONS;
DEVICE PERFORMANCE;
DFB LASER;
FREQUENCY BAND WIDTH;
FREQUENCY RANGES;
HIGH POWER LASER DIODE;
HIGH-RESOLUTION SPECTROSCOPY;
INTENSITY NOISE;
KEY COMPONENT;
KEY FEATURE;
LASER THRESHOLD;
LOW LEVEL;
LOW RELATIVE INTENSITY NOISE;
LOW RIN;
MAXIMUM OUTPUT POWER;
MICROWAVE PHOTONICS;
OPERATING RANGES;
OUTPUT POWER;
SIDE MODE SUPPRESSION RATIOS;
SIGNAL DISTRIBUTION;
SINGLE MODE;
ULTRA LOW RIN;
ULTRA-HIGH;
DISTRIBUTED FEEDBACK LASERS;
FIBER OPTIC SENSORS;
LASERS;
MICROWAVE SENSORS;
SEMICONDUCTOR DIODES;
SIGNAL PROCESSING;
SPECTROSCOPIC ANALYSIS;
SPECTROSCOPY;
TELECOMMUNICATION SYSTEMS;
SEMICONDUCTOR LASERS;
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EID: 77951536352
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.840917 Document Type: Conference Paper |
Times cited : (16)
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References (4)
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