ZnGeAs2 thin films properties: A potentially useful semiconductor for photovoltaic applications

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 001367-001369

  Peshek, T J ^a,b   Tang, Z ^a   Zhang, L ^a   Singh, R K ^a   To, B ^b   Gessert, T A ^b   Coutts, T J ^b   Newman, N ^a   Van Schilfgaarde, M ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; ANNEALED FILMS; COST EFFECTIVE; CRYSTALLINITIES; LIGHT ABSORBERS; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC MATERIALS; PULSED LASER;

CARRIER CONCENTRATION; COPPER COMPOUNDS; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; PULSED LASER APPLICATIONS; PULSED LASERS; THIN FILMS; ZINC;

AMORPHOUS FILMS;

EID: 77951526928     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411281     Document Type: Conference Paper

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