Preparation of aluminum oxide layer for gate insulator application in organic thin-film transistors

Molecular Crystals and Liquid Crystals

Volumn 519, Issue , 2010, Pages 187-191

  Lee, Jong Won ^a   Park, Jaehoon ^b   Kim, Dong Wook ^a   Noh, Jung Chul ^a   Choi, Jong Sun ^a  

^a Hong Ik University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

Anodizing aluminum oxide; Gate insulator; Organic thin film transistor

Indexed keywords

ALUMINUM OXIDES; ANODIZED ALUMINUM OXIDE; ANODIZING ALUMINUM; BARRIER-TYPE FILMS; CONDUCTING CHANNELS; GATE INSULATOR; LONG RANGE; ON/OFF RATIO; ORGANIC THIN FILM TRANSISTORS; SMOOTH SURFACE; SUBTHRESHOLD SLOPE;

ACTIVATION ENERGY; ALUMINA; ALUMINUM; CHARGE CARRIERS; CHEMICAL SENSORS; FILM PREPARATION; OXIDE FILMS; SEMICONDUCTING ORGANIC COMPOUNDS;

THIN FILM TRANSISTORS;

EID: 77951456070     PISSN: 15421406     EISSN: 15635287     Source Type: Journal    
DOI: 10.1080/15421401003594479     Document Type: Conference Paper

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