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Volumn 5, Issue 9, 2008, Pages 2819-2821
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Miniaturized InSb mid-IR photovoltaic sensor for room temperature operation
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Author keywords
[No Author keywords available]
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Indexed keywords
1/F NOISE;
BARRIER LAYERS;
MINIMUM VALUE;
OUTPUT SIGNAL;
OUTPUT VOLTAGES;
P-TYPE DOPANT;
PHOTODIODE STRUCTURES;
PHOTOEXCITED ELECTRONS;
PHOTOVOLTAIC MODES;
ROOM TEMPERATURE;
ROOM-TEMPERATURE OPERATION;
SEMI-INSULATING GAAS;
UNCOOLED SENSORS;
ZN DOPING;
CARRIER CONCENTRATION;
CHIP SCALE PACKAGES;
GALLIUM ALLOYS;
OPEN CIRCUIT VOLTAGE;
PHOTODIODES;
SEMICONDUCTOR DIODES;
SEMICONDUCTOR DOPING;
SENSORS;
SIGNAL TO NOISE RATIO;
TIN;
ZINC;
INDIUM ANTIMONIDES;
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EID: 77951290069
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200779264 Document Type: Conference Paper |
Times cited : (6)
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References (10)
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