X-ray diffraction studies of selective area grown InGaN/GaN multiple quantum wells on multi-facet GaN ridges

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1655-1658

  O'Malley, S M ^a   Bonanno, P L ^a   Wunderer, T ^b   Bruckner P ^b   Neubert, B ^b   Scholz, F ^b   Kazimirov, A ^c   Sirenko, A A ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF ULM   (Germany)

^c Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC DIRECTIONS; FACET GROWTH; GROWTH ENHANCEMENT; HIGH-RESOLUTION X-RAY DIFFRACTION; INGAN/GAN; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOVPE; MULTIPLE QUANTUM WELLS; RATE RATIOS; SELECTIVE AREA GROWTH; SELECTIVE AREAS; STRAIN VARIATION; VAPOUR-PHASE; VERTICAL GROWTH; X-RAY DIFFRACTION STUDIES;

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77951231188     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778571     Document Type: Conference Paper

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