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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2073-2076

Spectral and time resolved scanning near-field microscopy of broad area 405 nm InGaN laser diode dynamics

(7) Braun, Harald a Meyer, Tobias a Scholz, Dominik a Schwarz, Ulrich T a Brüninghoff, Stefanie b Lell, Alfred b Strauß, Uwe b

a UNIVERSITY OF REGENSBURG (Germany)

b OSRAM OPTO SEMICONDUCTORS GMBH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BROAD-AREA LASERS; CARRIER-INDUCED CHANGES; CRITICAL POINTS; DYNAMIC FEATURES; ELECTRICALLY PUMPED; FAR-FIELD; FILAMENTATION; GAAS; GAN LASER DIODES; HIGH SPECTRAL RESOLUTION; INGAN LASER DIODES; LASER SPECTRA; LATERAL MODES; LONGITUDINAL MODES; MATERIAL SYSTEMS; SPATIAL DYNAMICS; TIME-RESOLVED; TIME-RESOLVED SCANNING;

EQUATIONS OF STATE; GALLIUM ALLOYS; GALLIUM NITRIDE; REFRACTIVE INDEX; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS;

NEAR FIELD SCANNING OPTICAL MICROSCOPY;

EID: 77951211168 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200778416 Document Type: Conference Paper

Times cited : (2)

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