Photogalvanic effects in HgTe quantum wells

IRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics

Volumn , Issue , 2007, Pages 773-774

  Wittmann, B ^a   Ravash, R ^a   Diehl, H ^a   Danilov, S N ^a   Kvon, Z D ^b   Tarasenko, S A ^c   Ivchenko, E L ^c   Mikhailov, N N ^b   Dvoretsky, S A ^b   Prettl, W ^a   Ganichev, S D ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

Circular and linear photogalvanic effects; HgTe quantum wells; Spintronics

Indexed keywords

MILLIMETER WAVES; RADIATION EFFECTS; SEMICONDUCTOR QUANTUM WELLS; SPINTRONICS; TELLURIUM COMPOUNDS; TERAHERTZ WAVES;

CURRENT RESPONSE; PHENOMENOLOGICAL THEORY; PHOTOGALVANIC EFFECTS; TERAHERTZ RADIATION;

MERCURY COMPOUNDS;

EID: 77951177193     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/icimw.2007.4516724     Document Type: Conference Paper

References (1)

1. S.D. Ganichev and W. Prettl, Intense Terahertz Excitation of Semiconductors. Oxford University Press, 2006.