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Applied Physics Letters

Volumn 96, Issue 14, 2010, Pages

Effect of incident light power on Schottky barriers and I-V characteristics of organic bulk heterojunction photodiodes

(5) Guvenc, Ali Bilge a Yengel, Emre a Wang, Guoping a Ozkan, Cengiz S a Ozkan, Mihrimah a

a University of California Riverside (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK HETEROJUNCTION; BUTYRIC ACIDS; EXPERIMENTAL DATA; INCIDENT LIGHT POWER; IV CHARACTERISTICS; METHYL ESTERS; ORGANIC PHOTODIODES; ORGANIC SEMICONDUCTOR; POLY-3-HEXYLTHIOPHENE; REVERSE VOLTAGE BIAS; SCHOTTKY BARRIERS; SPACE CHARGE REGIONS;

FATTY ACIDS; MATHEMATICAL MODELS; PHOTODIODES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES;

HETEROJUNCTIONS;

EID: 77951173663 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3374402 Document Type: Article

Times cited : (5)

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