Efficient luminescence in highly tensile-strained germanium

IEEE International Conference on Group IV Photonics GFP

Volumn , Issue , 2009, Pages 265-267

  Huo, Y ^a   Lin, H ^a   Rong, Y ^a   Makarova, M ^a   Li, M ^b   Chen, R ^a   Kamins, T I ^c   Vuckovic, J ^a   Harris, J S ^a  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

^c HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL TENSILE; DIRECT BAND GAP; INGAAS/GAAS; LOW TEMPERATURE PHOTOLUMINESCENCE; STRAINED-GE;

GERMANIUM;

EID: 77951076629     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GROUP4.2009.5338361     Document Type: Conference Paper

References (5)

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2. Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, "Strong quantum-confined Stark effect in germanium, quantum-well structures on silicon," Nature, 437, 1334-1336 (2005).
3. M. V. Fischetti and S. E. Laux, "Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys," J. Appl. Phys. 80, 2234 (1996).
4. Xiaochen Sun, Jifeng Liu, Lionel C. Kimerling, and Jurgen Michel, "Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes", Opt. Lett., vol.34, No.8, (2009)
5. Y. Bai, K. E. Lee, C. Cheng, M. L. Lee, and E. A. Fitzgerald, "Growth of highly tensile-strained Ge on relaxed InxGal-xAs by metal organic chemical, vapor deposition," J. Appl. Phys. 104, 084518 (2008).