An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films

Journal of Physics D: Applied Physics

Volumn 43, Issue 17, 2010, Pages

  Lee, S W ^a   Ha, Jun Seok ^b   Lee, Hyun Jae ^c   Lee, Hyo Jong ^d   Goto, H ^e   Hanada, T ^e   Goto, T ^c   Fujii, Katsushi ^c   Cho, M W ^a   Yao, T ^c  

^a Wavesquare Inc   (South Korea)

^b Chonnam National University   (South Korea)

^c TOHOKU UNIVERSITY   (Japan)

^d Dong A University   (South Korea)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP TRANSITION; EMPIRICAL EQUATIONS; ENERGY SHIFT; EXCITON TRANSITION ENERGY; FINITE TEMPERATURES; FREE EXCITONS; GAN FILM; LIFT-OFF METHODS; OPTICAL TRANSITION ENERGIES; SAPPHIRE SUBSTRATES; STRAIN COEFFICIENT; STRAIN COMPONENTS; STRAIN EFFECT; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE; THERMAL EXPANSION COEFFICIENTS; TRANSITION ENERGY;

ENERGY GAP; EPITAXIAL FILMS; EXCITONS; GALLIUM NITRIDE; SAPPHIRE; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE DISTRIBUTION; THERMAL EXPANSION;

GALLIUM ALLOYS;

EID: 77951070910     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/17/175101     Document Type: Article

References (25)

1. Varshni Y P 1967 Physica 34 149
2. Kudrawiec R, Rudziński M, Serafinczuk J, Zajc M and Misiewicz J 2009 J. Appl. Phys. 105 093541
3. Teisseyre H, Perlin P, Suski T, Grzegory I, Porowski S, Jun J, Pietraszko A and Moustakas T D 1994 J. Appl. Phys. 76 2429
4. Shan W, Schmidt T J, Yang X H, Hwang S J, Song J J and Goldenberg B 1995 Appl. Phys. Lett. 66 985
5. Manasreh M O 1996 Phys. Rev. B 53 16425
6. Li C F, Huang Y S, Malikova L and Pollak F H 1997 Phys. Rev. B 55 9251
7. Vurgaftman I and Meyer J R 2002 J. Appl. Phys. 94 3675
8. Lee W, Lee S, Goto H, Ko H, Cho M W and Yao T 2006 Phys. Status Solidi c 6 1388
9. Lee S W, Ha J, Lee H, Lee H, Goto H, Hanada, Goto T, Fujii K, Cho M W and Yao T 2009 Appl. Phys. Lett. 94 082105
10. Darakchieva Monemar V B and Usui A 2007 Appl. Phys. Lett. 91 031911
11. Angerer H, et al. 1997 Appl. Phys. Lett. 71 1504
12. Skromme B J, Palle K C, Poweleit C D, Yamane H, Aoki M and DiSalvo F J 2002 Appl. Phys. Lett. 81 3765
13. Kornitzer K, Ebner T, Thonke K, Sauer R, Kirchner C, Schwegler V, Kamp M, Leszczynski M, Grzegory I and Porowski S 1999 Phys. Rev. B 60 1471
14. Mayer M, Pelzmann A, Kamp M, Ebeling K J, Teisseyre H, Nowak G, Leszczynski M, Grzegory I, Porowski S and Karczewski G 1997 Japan. J. Appl. Phys. Part 2 36 L1634
15. Wysmolek A, et al. 2002 Phys. Rev. B 66 245317
16. Kasic A, Gogova D, Larsson H, Ivanov I, Hemmingsson C, Yakimova R, Monemar B and Heuken M 2005 J. Appl. Phys. 98 073525
17. Olsen G H and Ettenberg M 1977 J. Appl. Phys. 48 2543
18. Kozawa T, Kachi T, Kano H, Nagase H, Koide N and Manabe K 1995 J. Appl. Phys. 77 4389
19. Slater J C and Koster G F 1954 Phys. Rev. 94 1498
20. Jenkins D W and Dow J D 1989 Phys. Rev. B 39 3317
21. Ranjan V, Allan G, Priester C and Delerue C 1983 Phys. Rev. B 28 935
22. Kisielowski C, et al. 1996 Phys. Rev. B 54 17745
23. Shan W, Hauenstein R J, Fischer A J, Song J J, Perry W G, Bremser M D, Davis R F and Goldenberg B 1996 Phys. Rev. B 54 13460
24. Wright A F 1997 J. Appl. Phys. 82 2833
25. Chuang S L and Chang C S 1996 Phys. Rev. B 54 2491