Hydrogen distribution in the vicinity of dangling bonds in hydrogenated amorphous silicon (a-Si:H)

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 3, 2010, Pages 552-555

  Fehr, M ^a   Schnegg, A ^a   Teutloff, C ^b   Bittl, R ^b   Astakhov, O ^c   Finger, F ^c   Rech, B ^a   Lips, K ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b FREIE UNIVERSITÄT BERLIN   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; ELECTRON NUCLEAR DOUBLE RESONANCE; ELECTRON SPIN-ECHO ENVELOPE MODULATIONS; EXPERIMENTAL DATA; HYDROGEN DISTRIBUTION; HYDROGENATED AMORPHOUS SILICON (A-SI:H); LIGHT INDUCED DEFECTS; SHORT RANGE ORDERS; TEST MODELS;

AMORPHOUS SILICON; ATOMS; DEFECTS; HYDROGEN BONDS; SPIN DYNAMICS;

DANGLING BONDS;

EID: 77950968746     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200982876     Document Type: Article

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