Soft error sensitivities in 90 nm bulk CMOS SRAMs

IEEE Radiation Effects Data Workshop

Volumn , Issue , 2009, Pages 123-126

  Lawrence, Reed K ^a   Ross, Jason F ^a   Haddad, Nadim F ^a   Reed, Robert A ^b   Albrecht, David R ^a  

^a BAE SYSTEMS   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

90 nm CMOS; Multiple cell upset; Single event upset

Indexed keywords

90NM CMOS; BULK CMOS; CELL DESIGN; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; LOW-ENERGY PROTONS; MULTIPLE-CELL UPSETS; SINGLE EVENT UPSETS; SOFT ERROR; STATIC RANDOM ACCESS MEMORY;

CMOS INTEGRATED CIRCUITS; METALLIC COMPOUNDS; MOS DEVICES; STATIC RANDOM ACCESS STORAGE; TECHNICAL PRESENTATIONS;

RADIATION EFFECTS;

EID: 77950945190     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/REDW.2009.5336302     Document Type: Conference Paper

References (4)

1. R.K Lawrence and A.T. Kelly, "Single Event Effect Induced Multiple- Cell Upsets in a Commercial 90nm CMOS Digital Technology," IEEE Trans. on Nucl. Sci., Vol.55, No.6, pp. 3367-3374, 2008.
2. K.P. Rodbell, D.F. Heidel, H.H.K. Tang, M.S. Gordon, P. Oldiges and C.E. Murray, "Low-Energy Proton-Induced Single-Event-Upsets in 65nm Node, Silicon-on-Isolator, Latches and Memory Cells," IEEE Trans. on Nucl. Sci., Vol.54, No.6, pp. 2474-2479, 2007.
3. D.F. Heidel, P.W. Marshall, K.A. LaBel, J.R. Schwank, K.P. Rodbell, M.C. Hakey, M.D. Berg, P.E. Dodd, M.R. Friendlich, A.D. Phan, C.M. Seidleck, M.R. Shaneyfelt and M.A. Xapsos, "Low Energy Proton Single-Event-Upset Test Results on 65nm SOI SRAM", IEEE Trans. on Nucl. Sci., Vol.55, No.6, pp. 3394-3400, 2008.
4. N.F. Haddad, T. Bach, T. Conway, D. Lawson, J. Ross, J. Rodgers, A. Tipton, D. Ball, K. Warren and R. Schrimpf, "Eliminating Low-LET Sensitivities in Deep Sub-Micrometer SRAM through Non-intrusive Technology Features", RADECS 2006.