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Volumn 495, Issue 2, 2010, Pages 642-645
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Raman spectroscopy of chalcogenide thin films prepared by PLD
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Author keywords
Raman spectroscopy; Thin films
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Indexed keywords
AG DOPING;
ATOMIC FRACTIONS;
BINARY FILMS;
BINARY GLASS;
CHALCOGENIDE GLASS;
CHALCOGENIDE THIN FILMS;
CORNER-SHARING TETRAHEDRA;
DIFFUSION PROCESS;
EDGE SHARING;
INTENSITY REDUCTION;
MEDIUM RANGE ORDER;
NEW MATERIAL;
NON-VOLATILE MEMORIES;
OPTICAL AND ELECTRICAL PROPERTIES;
RELAXATION EFFECT;
STRETCHING MODES;
TECHNOLOGICAL APPLICATIONS;
TERNARY FILM;
DEPOSITION;
ELECTRIC PROPERTIES;
GERMANIUM;
GLASS;
OPTICAL PROPERTIES;
PROGRAMMABLE LOGIC CONTROLLERS;
PULSED LASER DEPOSITION;
PULSED LASERS;
RAMAN SCATTERING;
RAMAN SPECTROSCOPY;
SEMICONDUCTING SELENIUM COMPOUNDS;
THIN FILMS;
SILVER;
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EID: 77950939577
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2009.10.251 Document Type: Article |
Times cited : (10)
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References (16)
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