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Volumn 10, Issue 4, 2010, Pages 1590-1597

Growth mechanism of TiCx during self-propagating high-temperature synthesis in an Al-Ti-C System

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EID: 77950802444     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg9010983     Document Type: Article
Times cited : (48)

References (35)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.