Room temperature ferromagnetism of Ni, (Ni, Li), (Ni, N)-doped ZnO thin films

Science China Technological Sciences

Volumn 53, Issue 2, 2010, Pages 293-296

  Ye, Xiaojuan ^a   Song, Haian ^a   Zhong, Wei ^a   Qi, Xiaosi ^a   Xu, Meihua ^a   Jin, Changqing ^a   Yang, Zaixin ^a   Au, Chaktong ^b   Du, Youwei ^a  

^a NANJING UNIVERSITY   (China)

^b HONG KONG BAPTIST UNIVERSITY   (Hong Kong)

Author keywords

Chemical synthesis; Electronic states (localized); Semiconductors; Thin films

Indexed keywords

FERROMAGNETISM; II-VI SEMICONDUCTORS; LITHIUM COMPOUNDS; MAGNETIC MOMENTS; METALLIC FILMS; NICKEL; NICKEL METALLOGRAPHY; OPTICAL FILMS; OXIDE MINERALS; SEMICONDUCTOR MATERIALS; SOL-GELS; SYNTHESIS (CHEMICAL); THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE; ZINC SULFIDE;

DENSITY OF DEFECTS; DOPED ZNO THIN FILMS; ELECTRONIC STATES (LOCALIZED); NI-DOPED ZNO THIN FILMS; ROOM TEMPERATURE FERROMAGNETISM; SI (100) SUBSTRATE; SOL-GEL TECHNIQUE; WURTZITE STRUCTURE;

NITROGEN COMPOUNDS;

EID: 77950788589     PISSN: 16747321     EISSN: 18691900     Source Type: Journal    
DOI: 10.1007/s11431-010-0038-7     Document Type: Article

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