Structural and electronic properties of amorphous InSb from first principles study

Physica B: Condensed Matter

Volumn 405, Issue 10, 2010, Pages 2481-2484

  Wang, L ^a   Chen, X S ^a   Huang, Y ^a   Lu, W ^a   Zhao, J J ^b  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Amorphous semiconductor; Coordination number; Density of states; Modification phenomenon

Indexed keywords

AVERAGE COORDINATION NUMBER; BAND EDGE; CONTINUOUS RANDOM NETWORKS; COORDINATION NUMBER; DENSITY OF STATE; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; STRUCTURAL PARAMETER;

AMORPHOUS SEMICONDUCTORS; ELECTRONIC PROPERTIES;

INDIUM ANTIMONIDES;

EID: 77950692166     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.03.017     Document Type: Article

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